收藏本站
TC4431/TC4432
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1 .
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
1
2
3
4
5
6
7
8
Symbol
V DD
IN
LOCK DIS
GND
GND
OUT
OUT
V DD
Description
Supply Input, 4.5V to 30V
TTL/CMOS Compatible Input
Input Pin, Enable/Disable for UV Lockout
Ground
Ground
Drive Output, Pull Down
Drive Output, Pull Up
Supply Input, 4.5V to 30V
3.1
Supply Input (V DD )
3.4
Ground (GND)
The V DD input is the bias supply input for the MOSFET
driver and is rated for 4.5V to 30V with respect to the
ground pins. The V DD input should be bypassed to
ground with a local ceramic capacitor. The value of this
capacitor should be chosen based on the capacitive
load that is being driven.
The ground pins are the return path for the bias current
and for the high peak currents which discharge the load
capacitor. Both ground pins should be used to ensure
proper operation. The ground pins should be tied into a
ground plane or have short traces to the bias supply
source return.
3.2
Control Input (IN)
3.5
Drive Output (OUT)
The MOSFET driver input is a TTL/CMOS compatible
input with 250 mV of hysteresis between the high and
low threshold voltages. If an input signal level of greater
than 12V is applied to the device, a series current
limiting resistor is recommended.
The TC4431/TC4432 devices have individual source
and sink output pins. This feature can be used to adjust
the rise and fall time independently by adding separate
charge and discharge resistors external to the device.
Pin 7 (source output) can source 3 A peak currents into
capacitive loads and pin 6 (sink output) can sink 1.5 A
3.3
Lockout Disable (LOCK DIS)
peak currents from a capacitive load.
The lockout pin enables/disables the undervoltage
lockout feature of the device. If undervoltage lockout is
desired (output is not enabled until the bias voltage
reaches 8.4V (typical) on the rising edge and is
disabled when the bias voltage reaches 7.7V (typical)
on the falling edge), the lockout pin should be left float-
ing. If operation below 7V is desired, the lockout pin
should be tied to ground.
DS21424D-page 6
? 2007 Microchip Technology Inc.
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
TC4452VPA IC MOSFET DVR 12A HS 8DIP
TC4467COE IC MOSFET DVR QUAD NAND 16SOIC
TC4627EOE IC MOSFET DRIVER 1.5A 16SOIC
TCN1.25SV THERMASHIELD CONVOLUTED 1.25" 4'
TCSD-12-01-N CONN SOCKET 24 POS 2MM GOLD
TDGL004 BOARD CEREBOT 32MX7 PIC32MX795
TEACLIPPER-PIC-HV-PT PROGRAMMER TEACLIPPER/PIC HI-V
TJA1010T/N1,118 IC OCTAL LOW SIDE DRVR 28SOIC
相关代理商/技术参数
TC4432VPA 功能描述:功率驱动器IC 1.5A Sngl 30V MOSFET Drvr N-Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4451 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:12A High-Speed MOSFET Drivers
TC4451VAT 功能描述:功率驱动器IC 12A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4451VMF 功能描述:功率驱动器IC 12A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4451VMF713 功能描述:功率驱动器IC 12A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4451VOA 功能描述:功率驱动器IC 12A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4451VOA 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC
TC4451VOA713 功能描述:功率驱动器IC 12A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube